Author:
Wüthrich J.,Alt C.,Rubbia A.
Abstract
Abstract
In the context of particle detectors, low-temperature
covalent wafer-wafer bonding allows for integration of high-Z
materials as absorbing layers with readout chips produced in
standard CMOS processes. This enables for instance the fabrication
of novel highly efficient X-ray imaging sensors. In order to
investigate the effects of the covalent bonding on the signal
generated in such sensors, wafer-wafer bonded silicon-silicon P-N
pad diodes have previously been produced. The behaviour of these
test samples is being investigated with transient current technique
(TCT) measurements. In this paper we present an overview of the TCT
setup as well as a custom sandwich-type sample holder used for these
measurements. A review of the results presented in a previous paper
shows, that the bonded P-N structures show a highly asymmetric
depletion behaviour under reverse bias. IR edge TCT measurements
confirm that only the P-side of the samples is being depleted.
Subject
Mathematical Physics,Instrumentation