Author:
Paolozzi L.,Munker M.,Cardella R.,Milanesio M.,Gurimskaya Y.,Martinelli F.,Picardi A.,Rücker H.,Trusch A.,Valerio P.,Cadoux F.,Cardarelli R.,Débieux S.,Favre Y.,Fenoglio C.A.,Ferrere D.,Gonzalez-Sevilla S.,Kotitsa R.,Magliocca C.,Moretti T.,Nessi M.,Pizarro Medina A.,Sabater Iglesias J.,Saidi J.,Vicente Barreto Pinto M.,Zambito S.,Iacobucci G.
Abstract
Abstract
The Picosecond Avalanche Detector is a multi-junction
silicon pixel detector based on a (NP)drift(NP)gain
structure, devised to enable charged-particle tracking with high
spatial resolution and picosecond time-stamp capability. It uses a
continuous junction deep inside the sensor volume to amplify the
primary charge produced by ionizing radiation in a thin absorption
layer. The signal is then induced by the secondary charges moving
inside a thicker drift region. A proof-of-concept monolithic
prototype, consisting of a matrix of hexagonal pixels with
100 μm pitch, has been produced using the 130 nm SiGe BiCMOS
process by IHP microelectronics. Measurements on probe station and
with a 55Fe X-ray source show that the prototype is functional
and displays avalanche gain up to a maximum electron gain of 23. A
study of the avalanche characteristics, corroborated by TCAD
simulations, indicates that space-charge effects due to the large
primary charge produced by the conversion of X-rays from the
^55Fe source limits the effective gain.
Subject
Mathematical Physics,Instrumentation
Cited by
7 articles.
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