Abstract
Abstract
This paper provides an assessment of the electrical and noise performance in the 180 nm double silicon-on-insulator (DSOI) technology, which shows advantages for analog front-end radiation detectors. For the first time, the impact of the back-gate voltage on the electrical and noise performance of DSOI MOSFETs is investigated. The transconductance-to-current (gm
/ID
) ratio and low-frequency (1/f) noise were measured as a function of the MOS device types (NMOS/PMOS), gate length, and bias condition of front- and back-gates. Experimental results show that positive back-gate voltage deteriorates the gm
/ID
ratio of the MOSFETs in weak inversion region. The DSOI NMOS devices overwhelm the PMOS with better gm
/ID
and 1/f performance. The DSOI devices have a comparable 1/f noise with the 180 nm SOI counterparts. With negative back-gate voltage applied, the low frequency noise performance of NMOS is improved. This assessment of DSOI technology gives a guideline for the readout circuit design in detector front-end systems.