First-Principles Calculations of Structural, Elastic and Electronic Properties of Tetragonal HfO 2 under Pressure
Author:
Publisher
IOP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://iopscience.iop.org/article/10.1088/0253-6102/56/4/31/pdf
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1. Boron diffusion and penetration in ultrathin oxide with poly-Si gate
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4. Effect of Hf metal predeposition on the properties of sputtered HfO2/Hf stacked gate dielectrics
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