Peculiarities in the photoelectrical properties of CdS single crystals irradiated with fast-pile neutrons
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/10/i=6/a=017/pdf
Reference16 articles.
1. Self-Activated Semiconductivity in CdS Single Crystals
2. The Basic Significance of Oxygen Chemisorption on the Photoelectronic Properties of CdS and CdSe
3. Untersuchungen über den Einfluß von Vakuumtemperungen auf die Realstruktur von CdS-Einkristallen
4. Fast‐Neutron Irradiation Effects in CdS
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2. Nature of vacancy defect clusters in chalcogenic semiconductors of AIIBVI group irradiated by neutrons;physica status solidi (c);2009-12
3. Special features of the mechanism of defect formation in CdS single crystals subjected to irradiation with high doses of fast reactor neutrons;Semiconductors;2009-11
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