Interface roughness effect on density of states and mobility of narrow Si/Si1−xGexquantum wells: path-integral approach
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/42/i=19/a=195101/pdf
Reference39 articles.
1. High-mobility Si and Ge structures
2. Si/SiGe heterostructures: from material and physics to devices and circuits
3. Si/SiGe/Si pMOS Performance - alloy scattering and other considerations
4. Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition
5. Interface roughness scattering in GaAs/AlAs quantum wells
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1. Electron transport properties inm-plane andc-plane AlN/GaN heterostructures with interface roughness and anisotropic in-plane strain scatterings;Journal of Physics D: Applied Physics;2015-02-04
2. Electron mobility limited by surface and interface roughness scattering in AlxGa1−xN/GaN quantum wells;Chinese Physics B;2013-07
3. Description of low temperature bandtail states in two-dimensional semiconductors using path integral approach;Applied Physics Letters;2013-04-22
4. Two-dimensional electron transport in MgZnO/ZnO heterostructures: role of interface roughness;Journal of Physics D: Applied Physics;2011-07-27
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