Electron transport properties inm-plane andc-plane AlN/GaN heterostructures with interface roughness and anisotropic in-plane strain scatterings-Reference-Cited by-同舟云学术

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Electron transport properties inm-plane andc-plane AlN/GaN heterostructures with interface roughness and anisotropic in-plane strain scatterings

Published:2015-02-04 Issue:8 Volume:48 Page:085301
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Thongnum Anusit,Pinsook Udomsilp

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/48/i=8/a=085301/pdf

Reference30 articles.

1. Polarization Effects in Semiconductors

2. Development and prospects of nitride materials and devices with nonpolar surfaces

3. Charge transport in non-polar and semi-polar III-V nitride heterostructures

4. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

5. Nitrides with Nonpolar Surfaces

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Subthreshold Mobility in AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2016-05

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