Relationship of MBE growth parameters with the electrical properties of thin (100) InAs epilayers
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/12/i=9/a=023/pdf
Reference48 articles.
1. GaAs, GaP, and GaAsxP1−x Epitaxial Films Grown by Molecular Beam Deposition
2. Heteroepitaxial InAs Grown on GaAs from Triethylindium and Arsine
3. Effect of H2on residual impurities in GaAs MBE layers
4. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
5. Epitaxy by periodic annealing
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