Microscope spectrophotometric study of GaAs/AlxGa1-xAs MBE structures-Reference-Cited by-同舟云学术

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Microscope spectrophotometric study of GaAs/AlxGa1-xAs MBE structures

Published:1994-07-14 Issue:7 Volume:27 Page:1528-1532
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Geatches R M,Reeson K J,Criddle A J,Webb R P,Pearson P J,Weiss B L

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/27/i=7/a=029/pdf

Reference20 articles.

1. The change in refractive index of AlGaAs/GaAs single quantum wells due to impurity-induced mixing

2. Dielectric properties of nonsquare AlGaAs/GaAs single quantum wells at photon energies below the band gap

3. Spectroscopic ellipsometry and transmission electron microscopy study of annealed high‐dose oxygen implanted silicon

4. Spectroscopic ellipsometry characterization of silicon-on-insulator materials

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Microscopy;Analytical Chemistry;1996-01-01

2. Analysis of Franz–Keldysh oscillations in photoreflectance spectra of a AlGaAs/GaAs single‐quantum well structure;Journal of Applied Physics;1995-06-15

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