Status of SiC bulk growth processes-Reference-Cited by-同舟云学术

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Status of SiC bulk growth processes

Published:2007-10-05 Issue:20 Volume:40 Page:6150-6158
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Chaussende D,Wellmann P J,Pons M

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/40/i=20/a=S02/pdf

Reference94 articles.

1. Thermodynamics of the Si-C system I. Mass spectrometric studies of the condensed phases at high temperature

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2. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

3. Determination of Thermal Properties of Carbon Materials above 2000 °C for Application in High Temperature Crystal Growth;Crystal Research and Technology;2024-08-07

4. Fabrication of Amorphous Silicon–Carbon Hybrid Films Using Single-Source Precursors;Inorganic Chemistry;2023-09-13

5. Electronic and magnetic behaviors of Cr and Mn (co)-doped zinc-blende SiC compound;The European Physical Journal B;2023-07

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