Physical processes in EUV sources for microlithography

Abstract

The source is an integral part of an extreme ultraviolet lithography (EUVL) tool. Such a source, as well as the EUVL tool, has to fulfil very high demands both technical and cost oriented. The EUVL tool operates at a wavelength of 13.5 nm, which requires the following new developments. The light production mechanism changes from conventional lamps and lasers to relatively high-temperature emitting plasmas. The light transport, mainly refractive for deep ultraviolet (DUV), should be reflective for EUV. The source specifications as derived from the customer requirements on wafer throughput mean that the output EUV source power has to be hundreds of watts. This in its turn means that tens to hundreds of kilowatts of dissipated power has to be managed in a relatively small volume. In order to keep lithography costs as low as possible, the lifetime of the components should be as long as possible and at least of the order of thousands of hours. This poses a challenge for the sources, namely how to design and manufacture components robust enough to withstand the intense environment of high heat dissipation, flows of several keV ions as well as the atomic and particular debris within the source vessel. As with all lithography tools, the imaging requirements demand a narrow illumination bandwidth. Absorption of materials at EUV wavelengths is extreme with extinguishing lengths of the order of tens of nanometres, so the balance between high transmission and spectral purity requires careful engineering. All together, EUV lithography sources present technological challenges in various fields of physics such as plasma, optics and material science. These challenges are being tackled by the source manufacturers and investigated extensively in the research facilities around the world. An overview of the published results on the topic as well as the analyses of the physical processes behind the proposed solutions will be presented in this paper.