Effect of electrode type in the resistive switching behaviour of TiO2thin films-Reference-Cited by-同舟云学术

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Effect of electrode type in the resistive switching behaviour of TiO2thin films

Published:2012-12-17 Issue:4 Volume:46 Page:045103
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Hernández-Rodríguez E,Márquez-Herrera A,Zaleta-Alejandre E,Meléndez-Lira M,Cruz W de la,Zapata-Torres M

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/46/i=4/a=045103/pdf

Reference26 articles.

1. Resistive switching in transition metal oxides

2. Reversible switching in phase-change materials

3. High density 3D memory architecture based on the resistive switching effect

4. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

5. Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

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