Validation of a triangular quantum well model for GaN-based HEMTs used in pH and dipole moment sensing-Reference-Cited by-同舟云学术

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Validation of a triangular quantum well model for GaN-based HEMTs used in pH and dipole moment sensing

Published:2012-10-30 Issue:47 Volume:45 Page:475101
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Rabbaa S,Stiens J

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Mechanism and control of current transport in GaN and AlGaN Schottky barriers for chemical sensor applications

2. AlxGa1–xN—A New Material System for Biosensors

3. Charge density and plasmon modes in a triangular quantum well model for doped and undoped gated AlGaN/GaN HEMTs

4. Theoretical study of electrolyte gate AlGaN∕GaN field effect transistors

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2. Ultrasensitive Real-Time Detection of Pb²⁺ Ions Using g-C₃N₄ Nanosheets;IEEE Sensors Journal;2023-05-15

3. AlGaN/GaN high electron mobility transistor for various sensing applications: A review;Micro and Nanostructures;2023-04

4. Physics based model of an AlGaN/GaN vacuum field effect transistor;Journal of Vacuum Science & Technology B;2022-09

5. 1T and 2H heterophase MoS₂ for enhanced sensitivity of GaN transistor-based mercury ions sensor;Nanotechnology;2022-04-07

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