Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/39/i=2/a=004/pdf
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1. Numerical simulations of power characteristics and emission spectra of InAs(Sb)-based mid-infrared LED structures;Journal of Physics: Conference Series;2020-12-01
2. High-purity InAs1-Sb epilayer grown by a LPE technique;Journal of Crystal Growth;2015-04
3. Properties of mid-IR diodes with n-InAsSbP/n-InAs interface;Physics and Simulation of Optoelectronic Devices XVIII;2010-02-11
4. Analytical modeling and ATLAS simulation for a homojunction LED in the mid-infrared spectral region;Optoelectronics Letters;2009-11
5. High-Power MWIR Cascaded InAs–GaSb Superlattice LEDs;IEEE Journal of Quantum Electronics;2009-07
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