On the measurement of semiconductor carrier concentration profiles
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,General Materials Science,Instrumentation
Link
http://stacks.iop.org/0022-3735/5/i=3/a=017/pdf
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5. A Mercury Contact Probe for MOS Measurements on Oxidized Silicon
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1. Electroless plating of gold on GaAs for fast characterization of thin epitaxial layers;Thin Solid Films;1978-11
2. Mercury probeCU measurements on GaP;Physica Status Solidi (a);1978-03-16
3. The electrical characterisation of semiconductors;Reports on Progress in Physics;1978-02-01
4. A technique for directly plotting the doping profile of semiconductor wafers (“8-shaped way”);Solid-State Electronics;1976-01
5. Electrical and cathodoluminescence measurements on ion implanted donor layers in GaAs;Solid-State Electronics;1975-03
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