Electrical properties and reliability of HfO 2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/16/2/040/pdf
Reference17 articles.
1. Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
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3. Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
4. Reliability of in-situ rapid thermal gate dielectrics in deep submicrometer MOSFET's
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2. Enhanced leakage current properties of HfO2/GaN gate dielectric stack by introducing an ultrathin buffer layer;Journal of Materials Science: Materials in Electronics;2013-10-27
3. Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor;Chinese Physics B;2013-07
4. Wet thermal annealing effect on TaN/HfO 2 /Ge metal—oxide—semiconductor capacitors with and without a GeO 2 passivation layer;Chinese Physics B;2012-11
5. Reliability of multi-state and multi-subsystem below stress-strength interference;Acta Physica Sinica;2011
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