Rectifying barrier at GaN/SiC hetero-junction studied with positron annihilation spectroscopy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/14/11/025/pdf
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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3. Comprehensive Survey for the Frontier Disciplines Progress of negative electron affinity GaN photocathode;Acta Physica Sinica;2011
4. Elastic and inelastic positron–helium scattering;Chinese Physics B;2010-06
5. Rectifying effect of heterojunction fabricated in freestanding thin film of polyaniline containing azobenzene side-chain;Chinese Physics B;2009-01
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