Pressure effects in AlAs/In x Ga 1− x As/GaAs resonant tunnelling diodes for application in micromachined sensors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/16/4/049/pdf
Reference16 articles.
1. Nanoelectronic devices—resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature
2. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
3. A multiple-state memory cell based on the resonant tunneling diode
4. A new resonant-tunnel diode-based multivalued memory circuit using a MESFET depletion load
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