Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN-Reference-Cited by-同舟云学术

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Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN

Published:2005-03-17 Issue:4 Volume:14 Page:830-833
ISSN:1009-1963
Container-title:Chinese Physics
language:
Short-container-title:Chinese Phys.

Author:

Zhong-Hui Li,Tong-Jun Yu,Zhi-Jian Yang,Yu-Chun Feng,Guo-Yi Zhang,Bao-Ping Guo,Han-Ben Niu

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1009-1963/14/4/034/pdf

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells;Chinese Physics B;2014-05

2. Effect of ternary mixed crystals on optical phonon modes in wurtzite nitride quantum well;Acta Physica Sinica;2010

3. Synthesis and characterization of GaN nanowires;Applied Surface Science;2009-06

4. Synthesis of large-scale GaN nanowires by ammoniating Ga 2 O 3 films on Co layer deposited on Si(111) substrates;Chinese Physics B;2008-06

5. Growth of β-Ga 2 O 3 nanorods by ammoniating Ga 2 O 3 /V thin films on Si substrate;Chinese Physics B;2008-04

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