Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide-Reference-Cited by-同舟云学术

Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide

Published:2016-11-30 Issue:1 Volume:4 Page:011008
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Alexander-Webber Jack A,Sagade Abhay A,Aria Adrianus I,Van Veldhoven Zenas A,Braeuninger-Weimer Philipp,Wang Ruizhi,Cabrero-Vilatela Andrea,Martin Marie-Blandine,Sui Jinggao,Connolly Malcolm R,Hofmann Stephan

Funder

European Research Council

Engineering and Physical Sciences Research Council

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/4/1/011008/pdf

Reference47 articles.

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5. Atmospheric doping effects in epitaxial graphene: correlation of local and global electrical studies

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