Electronic properties of Si/SiGe/Ge heterostructures
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics
Link
http://stacks.iop.org/1402-4896/1996/i=T68/a=009/pdf
Reference34 articles.
1. Gated Hall effect measurements in high‐mobility n‐type Si/SiGe modulation‐doped heterostructures
2. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
3. Intrinsic Optical Absorption in Germanium-Silicon Alloys
4. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
5. Valence-band offsets at strained Si/Ge interfaces
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1. Heteroatomic Si/Ge Zintl Clusters: Single-Crystal Structure Determination of Rb4[Si7.8Ge1.2](NH3)5 and [Rb([18]crown-6)Rb3][Si7.5Ge1.5](NH3)4;Chemistry - A European Journal;2011-10-04
2. Ion beam mixing for processing of nanostructure materials;Journal of Electronic Materials;2006-05
3. Ion beam mixing of silicon-germanium thin films;Journal of Electronic Materials;2005-05
4. Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks;Reviews of Modern Physics;2001-10-22
5. Quasi-Electric Fields and Band Offsets: Teaching Electrons New Tricks (Nobel Lecture);ChemPhysChem;2001-09-17
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