Processing and characterisation of an etched groove permeable base transistor on 6H-SIC-Reference-Cited by-同舟云学术

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Processing and characterisation of an etched groove permeable base transistor on 6H-SIC

Published:1994-01-01 Issue: Volume:T54 Page:56-59
ISSN:0031-8949
Container-title:Physica Scripta
language:
Short-container-title:Phys. Scr.

Author:

Fröjdh Christer,Thungström Göran,Hatzikonstantinidou Sofia,Nilsson Hans-Erik,Petersson C Sture

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/1994/i=T54/a=013/pdf

Reference13 articles.

1. Recent developments in SiC single-crystal electronics

2. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

3. Silicon etched-groove permeable base transistors with 90-nm finger width

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bipolar Permeable Transistor;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27

2. Full band Monte Carlo simulation of electron transport in 6H-SiC;Journal of Applied Physics;1999-07-15

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