Author:
Zhang 张 Li-Bo 黎博,Dong 董 Qing-Xin 庆新,Bai 白 Jian-Li 建利,Liu 刘 Qiao-Yu 乔宇,Cheng 程 Jing-Wen 靖雯,Li 李 Cun-Dong 存东,Liu 刘 Pin-Yu 品宇,Sun 孙 Ying-Rui 英睿,Huang 黄 Yu 宇,Ren 任 Zhi-An 治安,Chen 陈 Gen-Fu 根富
Abstract
We synthesize high-quality single crystal of CeGaSi by a Ga self-flux method and investigate its physical properties through magnetic susceptibility, specific heat and electrical resistivity measurements as well as high pressure effect. Magnetic measurements reveal that an antiferromagnetic order develops below T
m ∼ 10.4 K with magnetic moments orientated in the ab plane. The enhanced electronic specific heat coefficient and the negative logarithmic slope in the resistivity of CeGaSi indicate that the title compound belongs to the family of Kondo system with heavy fermion ground states. The max magnetic entropy change
−
Δ
S
M
max
(μ
0
H⊥c, μ
0
H = 7 T) around T
m is found to reach up to 11.85 J⋅kg−1⋅K−1. Remarkably, both the antiferromagnetic transition temperature and −lnT behavior increase monotonically with pressure applied to 20 kbar (1 bar = 105 Pa), indicating that much higher pressure will be needed to reach its quantum critical point.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献