Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains*

Abstract

Hill-like polycrystalline diamond grains (HPDGs) randomly emerged on a heavy boron-doped p+ single-crystal diamond (SCD) film by prolonging the growth duration of the chemical vapor deposition process. The Raman spectral results confirm that a relatively higher boron concentration (∼ 1.1 × 1021 cm−3) is detected on the HPDG with respect to the SCD region (∼ 5.4 × 1020 cm−3). It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination. The current–voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination, which means that the HPDGs provide a leakage path to form an ohmic contact. There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions. The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.