High- k gate dielectric GaAs MOS device with LaON as interlayer and NH 3 -plasma surface pretreatment
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/12/127304/pdf
Reference22 articles.
1. High-k ZrO2 dielectric thin films on GaAs semiconductor with reduced regrowth of native oxides by atomic layer deposition
2. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric
3. Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy
4. The electrical behavior of GaAs‐insulator interfaces: A discrete energy interface state model
5. Deep levels reduction in (NH4)2S treated and annealed GaAs epilayer on Si substrate
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