GaN-based violet laser diodes grown on free-standing GaN substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference17 articles.
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1. Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier;Nanomaterials;2022-11-12
2. Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide;Japanese Journal of Applied Physics;2018-06-14
3. Effect of Electrode Absorption on the Extraction Efficiency in an Light Emitting Diode;Advanced Science Letters;2016-11-01
4. Barrier and well thickness designing of InGaN/GaN multiple quantum well for better performances of GaN based laser diode;Acta Physica Sinica;2016
5. Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate;Optical and Quantum Electronics;2013-03-17
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