Author:
Lyu Zhijun,Lu Hongliang,Zhang Yuming,Zhang Yimen,Lu Bin,Zhu Yi,Meng Fankang,Sun Jiale
Abstract
A novel vertical graded source tunnel field-effect transistor (VGS-TFET) is proposed to improve device performance. By introducing a source with linearly graded component, the on-state current increases by more than two decades higher than that of the conventional GaAs TFETs without sacrificing the subthreshold swing (SS) due to the improved band-to-band tunneling efficiency. Compared with the conventional TFETs, much larger drive current range can be achieved by the proposed VGS-TFET with SS below the thermionic limitation of 60 mV/dec. Furthermore, the minimum SS about 20 mV/dec indicates its promising potential for further ultralow power applications.
Subject
General Physics and Astronomy
Cited by
1 articles.
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1. The structural evolution of light-ion implanted into GaAs single crystal after annealing;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2021-07