Analytical threshold voltage model for strained silicon GAA-TFET
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/25/11/118501/pdf
Reference15 articles.
1. Compact channel potential analytical modeling of DG-TFET based on Evanescent-mode approach
2. A Two-Dimensional Gate Threshold Voltage Model for a Heterojunction SOI-Tunnel FET With Oxide/Source Overlap
3. Analytical Surface Potential Model with TCAD Simulation Verification for Evaluation of Surrounding Gate TFET
4. Tuning the Germanium TFET: Device Optimization for Maximum Ion
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