Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime-Reference-Cited by-同舟云学术

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

Published:2013-09 Issue:9 Volume:22 Page:098801
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Yang Jing,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Chen Ping,Li Liang,Wu Liang-Liang,Le Ling-Cong,Li Xiao-Jing,He Xiao-Guang,Wang Hui,Zhu Jian-Jun,Zhang Shu-Ming,Zhang Bao-Shun,Yang Hui

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1674-1056/22/i=9/a=098801/pdf

Reference15 articles.

1. Background

2. AlGaN/GaN HEMTs-an overview of device operation and applications

3. Au/Pt/InGaN/GaN Heterostructure Schottky Prototype Solar Cell

4. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

5. Strain relaxation and optical properties of etched In0.19Ga0.81N nanorod arrays on the GaN template

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