Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/7/077304/pdf
Reference14 articles.
1. Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter-wave power application
2. Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs
3. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors
4. An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient
5. Punch-through in short-channel AlGaN/GaN HFETs
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1. Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps;Microsystem Technologies;2019-01-28
2. High breakdown voltage lateral AlGaN/GaN high electron mobility transistor with p-GaN islands buried buffer layer for power applications;Acta Physica Sinica;2017
3. Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures;Chinese Physics B;2016-07-26
4. The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT;IEICE Electronics Express;2015
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