Author:
Chen Zi-Xin,Liu Wei-Jing,Liu Jiang-Nan,Wang Qiu-Hui,Zhang Xu-Guo,Xu Jie,Li Qing-Hua,Bai Wei,Tang Xia-Dong
Abstract
Abstract
In this paper, a C-shaped pocket tunnel field effect transistor (CSP-TFET) has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effect of pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current (I
on
), on/off current ratio (I
on
/I
off
), subthreshold swing (SS), transconductance (g
m
), cut-off frequency (f
T
), and gain-bandwidth product (GBP) are investigated. The optimized CSP-TFET device exhibits excellent performance with high I
on
(9.98×10-4 A/μm), high I
on
/I
off
(~1011), as well as low SS (~12 mV/dec). The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.
Subject
General Physics and Astronomy
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献