Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference16 articles.
1. Synthesis and size-dependent properties of zinc-blende semiconductor quantum rods
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3. Reconstruction and chemical ordering at the surface of strained (In, Ga) As epilayers
4. Real-time determination of the segregation strength of indium atoms in InGaAs layers grown by molecular-beam epitaxy
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