The conduction band structures of GaAs and InP
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/6/i=9/a=016/pdf
Reference36 articles.
1. Optical Absorption due to Inter-Conduction-Minimum Transitions in Gallium Arsenide
2. Electrical Properties ofn-Type Epitaxial GaAs at High Temperatures
3. The band structure of several zinc-blende semiconductors from a self-consistent pseudopotential approach
4. Calculation of Energy-Band Pressure Coefficients from the Dielectric Theory of the Chemical Bond
5. Electroreflectance at a Semiconductor-Electrolyte Interface
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3. The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography;Materials Science in Semiconductor Processing;2015-02
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