Observation of plasmon excitation in liquid silicon by inelastic x-ray scattering

Abstract

Abstract Inelastic x-ray scattering (IXS) measurements were performed for observing the excitation of bulk plasmons in metallic liquid silicon (Si). The peak due to plasmon excitation was observed within the energy loss around 17 eV. Combined with IXS data of crystalline Si measured at several elevated temperatures, it was found that temperature dependence of the excitation energy in the crystalline solid state is explained by the electron gas including the band gap effect, whereas in the metallic liquid state near the melting point, it exhibits a departure from the electron gas; the plasmon energy takes a lower value than that of the electron gas. Such lowering of plasmon energies is reasonably explained by a model incorporating semiconducting component to the electron gas. Non-simple metallic nature in liquid silicon is highlighted by the observation of electron collective dynamics.