Electronic structure of AlCrN films investigated using various photoelectron spectroscopies andab initiocalculations
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/29/i=8/a=085502/pdf
Reference35 articles.
1. GaN, AlN, and InN: A review
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3. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors
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5. Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis
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