Improving Characteristic Parameters of Memristor Based on HfO2 Active Layer

Abstract

Abstract The improvement of the characteristic parameters of the memristor depends on the factors such as thickness and surface area of the active layer. These parameters define leakage currents, which is the main disatvantige of the memory storage device and to improve the electrical features the leakage currents must be dropped to the zero in ideal case. In the presented work is described the electrical isolation of the active layer from the substrate by the thin layer of photoresist, which is an electrical insulator. For reducing area was used the new fotomask, which is able to reduce area 100 times. The memristor structures are designed in the form of “crossbars”, which allows us to individually investigate each memristor and create a database with the possibility of incorporating it into the microchip in the future. In this work is presented also research outcomes regarding to selection memristor’s contacts and active layers. As contacts are overviewed tungsten (W), titanium nitride (TiN) and aluminum (Al). Is considered metal and transition metal oxides as active layers WOx, HfO2, WOx +HfO2, HfO2 + HfOx. The oxide electrical and structural properties is defined from I-V, C-V, XRD and XPS characteristics.