Investigation and comparison of pulsed laser deposited binary ZnO/MoO3 and ZnO/TiO2 thin films as gate dielectric sensing membranes for pH-ISFET application

Abstract

Abstract The research work aims to investigate and compare the pulsed laser deposited binary ZnO/MoO3 and ZnO/TiO2 thin films as gate dielectric insulator sensing membranes for pH-ISFET application. The thin films were deposited using pulsed laser deposition as deposited temperature and deposited at 923 K. The films were characterized using SEM, XRD and electrochemical impedance spectroscopy. For the statistical analysis, the sample sizes were calculated with a pretest power of 80% and an error rate of 0.05. The capacitance of the pulsed laser deposited thin films of the binary ZnO/MoO3 and ZnO/TiO2 as gate dielectric insulator sensing membranes were compared with a total sample size of 122. The SEM results shows the uniform arrangement of the nanostructures. The XRD reveals the amorphous nature of both the thin films. The experimental results obtained for the binary ZnO/MoO3 and ZnO/TiO2 provided stack capacitance with a significance value of 0.0001 (p less than 0.05). Pulsed laser deposited binary ZnO/TiO2 thin films as gate dielectric insulator sensing membranes for pH-ISFET application shows significantly better than binary ZnO/MoO3.