Author:
Yang Jinyu,Wang Yang,Wang Lu,Tian Ziao,Di Zengfeng,Mei Yongfeng
Abstract
Abstract
Aluminum nitride (AlN) has attracted a great amount of interest due to the fact that these group III–V semiconductors present direct band gap behavior and are compatible with current micro-electro-mechanical systems. In this work, three dimensional (3D) AlN architectures including tubes and helices were constructed by rolling up AlN nanomembranes grown on a silicon-on-insulator wafer via magnetron sputtering. The properties of the AlN membrane were characterized through transmission electron microscopy and X-ray diffraction. The thickness of AlN nanomembranes could be tuned via the RIE thinning method, and thus micro-tubes with different diameters were fabricated. The intrinsic strain in AlN membranes was investigated via micro-Raman spectroscopy, which agrees well with theory prediction. Whispering gallery mode was observed in AlN tubular optical microcavity in photoluminescence spectrum. A postprocess involving atomic layer deposition and R6G immersion were employed on as-fabricated AlN tubes to promote the Q-factor. The AlN tubular micro-resonators could offer a novel design route for Si-based integrated light sources. In addition, the rolled-up technology paves a new way for AlN 3D structure fabrication, which is promising for AlN application in MEMS and photonics fields.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
9 articles.
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