Compositional dependence of Raman frequencies in SixGe1−xalloys
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate;Coatings;2021-11-23
2. Crystallization kinetics and role of stress in Al induced layer exchange crystallization process of amorphous SiGe thin film on glass;Journal of Applied Physics;2019-09-28
3. In-situ formation of Ge-rich SiGe alloy by electron beam evaporation and the effect of post deposition annealing on the energy band gap;Materials Science in Semiconductor Processing;2018-06
4. Pure, single crystal Ge nanodots formed using a sandwich structure via pulsed UV excimer laser annealing;Nanotechnology;2015-03-27
5. Analysis of the electronic structures of 3d transition metals doped CuGaS2based on DFT calculations;Journal of Semiconductors;2014-01
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