High quality non-rectifying contact of ITO with both Ni and n-type GaAs-Reference-Cited by-同舟云学术

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High quality non-rectifying contact of ITO with both Ni and n-type GaAs

Published:2015-05 Issue:5 Volume:36 Page:053003
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Wang Qingsong,Masao Ikeda,Tan Ming,Dai Pan,Wu Yuanyuan,Lu Shulong,Yang Hui

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/36/i=5/a=053003/pdf

Reference19 articles.

1. Structure effect on electrical properties of ITO films prepared by RF reactive magnetron sputtering

2. Characterization and optimization of indium tin oxide films for heterojunction solar cells

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell;physica status solidi (a);2021-03-14

2. Optimization of ohmic contact on n-type GaAs by screen-printing silver paste;Japanese Journal of Applied Physics;2020-08-01

3. Study of Compression-Induced Supramolecular Nanostructures of an Imidazole Derivative by Langmuir–Blodgett Technique;Langmuir;2017-08-18

4. Effective way to realize optimized carrier recombination and electrode contact for excellent electrical performance silicon nanostructure based solar cells;Journal of Materials Science: Materials in Electronics;2016-01-23

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