Fabrication and characteristics of the nc-Si/c-Si heterojunction MAGFET
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Magnetic sensitivity of a MAGFET of uniform channel current density
2. Analysis of Split-Drain MAGFETs
3. Sector split-drain magnetic field-effect transistor based on standard CMOS technology
4. CMOS magnetic sensor integrated circuit with sectorial MAGFET
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2. Integrated magnetic-sensitive differential circuit based on heterojunction silicon magnetic-sensitive transistor;Sensors and Actuators A: Physical;2017-09
3. Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction;Sensors;2017-01-22
4. Research of Magnetic Characteristics of the Split-Drain MAGFET Based on Nano-Polysilicon TFTs;Key Engineering Materials;2015-05
5. Fabrication and characterization of the split-drain MAGFET based on the nano-polysilicon thin film transistor;Journal of Semiconductors;2014-09
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