Double humps and radiation effects of SOI NMOSFET-Reference-Cited by-同舟云学术

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Double humps and radiation effects of SOI NMOSFET

Published:2011-06 Issue:6 Volume:32 Page:064006
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Cui Jiangwei,Yu Xuefeng,Ren Diyuan,He Chengfa,Gao Bo,Li Ming,Lu Jian

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. BUSFET-a radiation-hardened SOI transistor

2. Investigation of body-tie effects on ion beam induced charge collection in silicon-on-insulator FETs using the Sandia nuclear microprobe

3. Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation

4. Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation of the front and back channels in a deep submicron partially depleted SOI NMOSFET under off-state stress;Journal of Semiconductors;2013-07

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