Explicit solution of channel potential and drain current model in symmetric double-gate polysilicon TFTs-Reference-Cited by-同舟云学术

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Explicit solution of channel potential and drain current model in symmetric double-gate polysilicon TFTs

Published:2014-03 Issue:3 Volume:35 Page:032002
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Ma Xiaoyu,Deng Wanling,Huang Junkai

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/35/i=3/a=032002/pdf

Reference20 articles.

1. High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization

2. A novel self-aligned double-gate TFT technology

3. High-Performance Short-Channel Double-Gate Low-Temperature Polysilicon Thin-Film Transistors Using Excimer Laser Crystallization

4. Read Characteristics of Independent Double-Gate Poly-Si Nanowire SONOS Devices

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