A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy

Published:2013-10 Issue:10 Volume:34 Page:104006
ISSN:1674-4926
Container-title:Journal of Semiconductors
language:
Short-container-title:J. Semicond.

Author:

Dai Pan,Lu Shulong,Ji Lian,He Wei,Bian Lifeng,Yang Hui,M. Arimochi,H. Yoshida,S. Uchida,M. Ikeda

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/1674-4926/34/i=10/a=104006/pdf

Reference14 articles.

1. 29.5%‐efficient GaInP/GaAs tandem solar cells

2. Over 30% efficient InGaP/GaAs tandem solar cells

3. A 32.6% efficient lattice-matched dual-junction solar cell working at 1000 suns

4. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

5. Modeling of two‐junction, series‐connected tandem solar cells using top‐cell thickness as an adjustable parameter

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of buffer layer and back-surface field on MBE-grown InGaAsP/InGaAs solar cells;Japanese Journal of Applied Physics;2016-01-05

2. III–V compound semiconductor multi-junction solar cells fabricated by room-temperature wafer-bonding technique;Japanese Journal of Applied Physics;2015-04-21

3. Carriers transport properties in GaInP solar cells grown by molecular beam epitaxy;Solid State Communications;2014-12

4. Room-temperature GaAs/InP wafer bonding with extremely low resistance;Applied Physics Express;2014-10-07

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