Design and analysis of a NMOS triggered LIGBT structure for electrostatic discharge protection

Author:

Tian Li,Cheng Jianbing,Zhang Cairong,Shen Li,Wang Lei

Abstract

Abstract A novel NMOS triggered LIGBT (NTLIGBT) structure is proposed for electrostatic discharge (ESD) protection in this paper. The structure utilizes internal NMOS to trigger SCR-like structure in LIGBT. The trigger voltage is significantly reduced because the embedded NMOS causes N+-drain/P-body junction being apt to avalanche breakdown. At the same time, the new parasitic PNP transistor including the newly added P+-region as a collector forms another path to bleed ESD current and then the conductivity modulation in the LIGBT is weakened. As a result, the holding voltage is increased. So, the proposed NTLIGBT structure has a narrow ESD design window. The simulation results show an improvement of 71.5% in trigger voltage and over 50% in holding voltage comparing with the conventional LIGBT structure.

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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