Characterizations of Ohmic and Schottky-behaving contacts of a single ZnO nanowire-Reference-Cited by-同舟云学术

Characterizations of Ohmic and Schottky-behaving contacts of a single ZnO nanowire

Published:2013-09-24 Issue:41 Volume:24 Page:415202
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Bercu Bogdan,Geng Wei,Simonetti Olivier,Kostcheev Sergei,Sartel Corinne,Sallet Vincent,Lérondel Gilles,Molinari Michaël,Giraudet Louis,Couteau Christophe

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/24/i=41/a=415202/pdf

Reference33 articles.

1. Silicon nanowire detectors showing phototransistive gain

2. Steady-state and transient photoconductivity in c-axis GaN nanowires grown by nitrogen-plasma-assisted molecular beam epitaxy

3. Space charge limited currents and trap concentrations in GaAs nanowires

4. Photoconductive enhancement of single ZnO nanowire through localized Schottky effects

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