Ex situn and p doping of vertical epitaxial short silicon nanowires by ion implantation-Reference-Cited by-同舟云学术

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Ex situn and p doping of vertical epitaxial short silicon nanowires by ion implantation

Published:2009-04-01 Issue:16 Volume:20 Page:165706
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Kanungo Pratyush Das,Kögler Reinhard,Nguyen-Duc Kien,Zakharov Nikolai,Werner Peter,Gösele Ulrich

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/20/i=16/a=165706/pdf

Reference28 articles.

1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

2. Silicon nanowires: the key building block for future electronic devices

3. Quantum Confinement and Electronic Properties of Silicon Nanowires

4. Silicon nanowires as chemical sensors

5. Simple and controlled single electron transistor based on doping modulation in silicon nanowires

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1. Nanoscale doping of polymeric semiconductors with confined electrochemical ion implantation;Nature Nanotechnology;2024-04-22

2. Nanoscale Doping of Polymeric Semiconductors with Confined Electrochemical Ion Implantation;2023-05-23

3. Tuning the Thermoelectric Properties of Boron‐Doped Silicon Nanowires Integrated into a Micro‐Harvester;Advanced Materials Technologies;2022-05-03

4. Enhanced photoelectric properties of PbSnSe thin films via quick oxygen ion-implantation sensitization;Journal of Materials Science;2022-01

5. Impurity Doping in Semiconductor Nanowires;Fundamental Properties of Semiconductor Nanowires;2020-11-17

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