Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si-Reference-Cited by-同舟云学术

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Cathodoluminescence studies of GaAs nano-wires grown on shallow-trench-patterned Si

Published:2010-10-25 Issue:46 Volume:21 Page:465701
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Lee Ling,Fan Wen-Chung,Ku Jui-Tai,Chang Wen-Hao,Chen Wei-Kuo,Chou Wu-Ching,Ko Chih-Hsin,Wu Cheng-Hsien,Lin You-Ru,Wann Clement H,Hsu Chao-Wei,Chen Yung-Feng,Su Yan-Kuin

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/21/i=46/a=465701/pdf

Reference16 articles.

1. Polar-on-nonpolar epitaxy

2. Generation and propagation of threading dislocations in GaAs grown on Si

3. Growth of high-quality GaAs on Ge∕Si1−xGex on nanostructured silicon substrates

4. Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence;Japanese Journal of Applied Physics;2012-06-20

2. Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence;Japanese Journal of Applied Physics;2012-06-01

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