Tuning band inversion symmetry of buckled III-Bi sheets by halogenation-Reference-Cited by-同舟云学术

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Tuning band inversion symmetry of buckled III-Bi sheets by halogenation

Published:2016-01-11 Issue:5 Volume:27 Page:055704
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Freitas R R Q,de Brito Mota F,Rivelino R,de Castilho C M C,Kakanakova-Georgieva A,Gueorguiev G K

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Reference31 articles.

1. Prediction of Large-Gap Two-Dimensional Topological Insulators Consisting of Bilayers of Group III Elements with Bi

2. Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation

3. Nontrivial topological electronic structures in a single Bi(111) bilayer on different substrates: A first-principles study

4. Time-reversal symmetry protected chiral interface states between quantum spin and quantum anomalous Hall insulators

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