Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization-Reference-Cited by-同舟云学术

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Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization

Published:2007-08-31 Issue:38 Volume:18 Page:385306
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Tchernycheva M,Sartel C,Cirlin G,Travers L,Patriarche G,Harmand J-C,Dang Le Si,Renard J,Gayral B,Nevou L,Julien F

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/18/i=38/a=385306/pdf

Reference36 articles.

1. Progress in High-Power, High Frequency AlGaN/GaN HEMTs

2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

3. Shortest wavelength semiconductor laser diode

4. Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells

5. Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy

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1. Growth of Three-Dimensional InGaN Nanostructures by Plasma-Assisted Molecular Beam Epitaxy;ACS Applied Nano Materials;2024-07-20

2. Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications;IEEE Access;2023

3. Selective Area Epitaxy of GaN Nanowires on Si Substrates Using Microsphere Lithography: Experiment and Theory;Nanomaterials;2022-07-08

4. Nonpolar AlxGa1−xN/AlyGa1−yN multiple quantum wells on GaN nanowire for UV emission;Nano Research;2022-05-31

5. Identification of multi-color emission from coaxial GaInN/GaN multiple-quantum-shell nanowire LEDs;Nanoscale Advances;2022

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